PART |
Description |
Maker |
IS42S16100C1-6T IS42S16100C1-6TL |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solu...
|
IS42S16100C1-7B IS42S16100C1-7BI IS42S16100C1-7BL |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
IS42S16100-5BL IS42S16100-5TL IS42S16100-6BL IS42S |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
IS42S16100 IS42S16100-7T |
512K Words x 16 Bits x 2 Banks (16-MBIT)
SYNCHRONOUS DYNAMIC RAM
|
ICS
|
IC42S32200L IC42S32200 IC42S32200_L-6B IC42S32200_ |
512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Circuit Systems ICSI
|
W986432AH W986432AHA1 |
512K x 4 BANKS x 32 BITS SDRAM 512K x 4 BANKS x 32 BITS SDRAM From old datasheet system
|
Winbond Electronics WINBOND[Winbond]
|
IS42S32800B-6BL IS42S32800B-6BI |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
|
http://
|
TC59LM814CFT-60 TC59LM806CFT-50 TC59LM806CFT-55 TC |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
|
TOSHIBA[Toshiba Semiconductor]
|
K4C89323AF-GCFB K4C89323AF-TCF6 K4C89323AF-TCF5 K4 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
IS42S32200C1-6T IS42S32200C1-7BL IS42S32200C1-6BL |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
W9816G6IB |
512K ?2 BANKS ?16 BITS SDRAM
|
Winbond
|
W9816G6CB W9816G6CB-6 W9816G6CB-7 |
512K × 2 BANKS × 16 BITS SDRAM
|
Winbond
|